MANUFACTURE OF COMPOUND SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE:To permit an epitaxial layer to be semi-insulator by heat treatment without adding impurities and improve the characteristics of devices which use the layer as a substrate. CONSTITUTION:After epitaxially growing an undoped p-type GaAs layer or an undoped n-type GaAs layer on the surface of a substrate, the substrate is heated at a prescribed critical temperature that is between 800 deg.C and 1200 deg.C depending on the carrier concentration of the epitaxial layer before the heat treatment.