| 摘要 |
PURPOSE:To prevent increase of a standby current under the normal temperature and high temperature to stabilize the data holding characteristic in the low temperature side by connecting a pair of resistance elements and a diode for receiving a backward bias to a memory cell. CONSTITUTION:A memory cell 20 is provided with a flip-flop circuit consisting of a pair of high resistance elements R1, R2 of which one ends are respectively connected with a power supply VDD and a pair of drive transistors T1, T2. Moreover, the high resistance elements R1, R2 are connected in parallel with diodes D1, D2 in the direction for receiving backward bias. In addition, the connecting points 12, 14 of the high resistance elements R1, R2 and drive transistors T1, T2 are provided with a pair of transfer transistors T3, T4. Increase of standby current under the normal and high temperature conditions can be presented by selectively using the diodes D1 and D2 and a current flowing through the high resistance elements R1, R2 can be decreased under the lower temperature condition and thereby a supply current exceeds a leak current for stabilizing data holding characteristic. |
