发明名称 ELECTROFORMING METHOD OF LEAD FRAME FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To facilitate regulation of the surface roughness of lead frame for semiconductor device, e.g. IC or LSI, while preventing deformation at the of peel off. CONSTITUTION:A first electrodeposition layer 11 is formed on the surface of an electroforming master mold 10 and then a second electrodeposition layer 15 is formed thereon in peelable manner. The surface roughness of the second electrodeposition layer 15, corresponding to a lead frame 1, can be varies easily by conditioning the compositional conditions of a bath for forming the first electrodeposition layer. The second electrodeposition layer 12 is peeled off the electroforming master mold 10 together with the first electrodeposition layer 11. Consequently, the second electrodeposition layer 15, corresponding to the lead frame 1, can be peeled off with no deformation.
申请公布号 JPH06334083(A) 申请公布日期 1994.12.02
申请号 JP19930142831 申请日期 1993.05.20
申请人 KYUSHU HITACHI MAXELL LTD 发明人 KOBAYASHI YOSHIHIRO
分类号 C25D1/08;C25D1/20;H01L23/50;(IPC1-7):H01L23/50 主分类号 C25D1/08
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