| 摘要 |
PURPOSE:To uniform and improve the general properties of non-single-crystal silicon-based semiconductor film which is formed, on a continuously moving band substrate. CONSTITUTION:After a film formation space is formed by using a band substrate 103 to be accumulated and a wall member 111 for film formation space other than the substrate, a material gas is led into the space and plasma is generated therein, then a non-single-crystal silicon-based semiconductor film is formed on the substrate 103 while the substrate 103 is moved. In such a formation method, it is characterized by that the temperature of the member 111 during film formation is kept lower than that of the substrate 103. |
