| 摘要 |
PURPOSE:To provide an FET acceleration sensor which is capable of inhibiting electrostatic adsorption of a movable gate electrode without lowering its sensibility. CONSTITUTION:A movable gate 101 is installed to a groove formed on a P type semiconductor substrate 102 where an N<+> source region 106, a channel region 107 and a drain region 105 are formed from the top of the P type semiconductor substrate 102 on both sides by way of an insulation film 107, thereby constituting an FET pair (FET 1 and FET 2) which shares the gate electrodes. In addition, the movable gate 101 is fixed with the substrate 102 by an anchor by way of a weight or a beam not illustrated herein. |
