| 摘要 |
The present disclosure relates to a semiconductor light emitting device having an electrode structure that reduces a light loss. The semiconductor light emitting device comprises: a plurality of semiconductor layers which include a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the semiconductor layer to generate light through a recombination of electrons and holes; a non-conductivity reflection film which is formed on the plurality of semiconductor layers and reflects the light from the active layer; a first electrode which is formed on the non-conductivity reflection film and has a pad portion and a protrusion protruding from the pad portion; a second electrode which is formed on the non-conductivity reflection film and faces the protrusion; a first branch electrode which is formed on the first semiconductor layer and extends between the first electrode and the second electrode below the protrusion; a first electrical connection unit which penetrates the non-conductivity reflection film and connects the protrusion and the first branch electrode; and a second electrical connection unit which penetrates the non-conductivity reflection film and electrically communicates the second electrode and the second semiconductor layer. |
