| 摘要 |
<p>PURPOSE:To increase the integration degree of a read-only memory and to shorten the time elapsed until the memory is completed since the decision of a storage content. CONSTITUTION:Through holes 7 are formed in a first interlayer insulating film 6 on a first-layer aluminum interconnection film 5, diodes are formed in the individual through holes 7, a second interlayer insulating film 9 is formed on the first interlayer insulating film 6, and a second-layer aluminum interconnection film 11 which is connected to the diodes is formed via through holes 10 formed in the second interlayer insulating film 9 on the basis of a storage content.</p> |
