发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To prevent the generation of malfunction and the useless prolongation of a waiting time by outputting a status polling signal and informing the outside that the inside is under reset operation or the reset operation is completed. CONSTITUTION:This memory device is provided with a control circuit 1 and the control circuit 1 controls an I/O buffer 2 and a command register 3 based on the control signals: the inverse of CE, the inverse of OE and the inverse of WE. When external resetting action is imparted to the memory during the mode operation, a user knows whether the inside of the memory is in a 'Ready' state or a 'Busy' state by means of a status polling signal. Consequently, the generation of malfunction and the useless prolongation of the waiting time are prevented as much as possible.</p>
申请公布号 JPH06333398(A) 申请公布日期 1994.12.02
申请号 JP19930121640 申请日期 1993.05.24
申请人 TOSHIBA CORP 发明人 MIYAGAWA TADASHI;NAKAI HIROTO;MATSUDA SHIGERU;TAURA TADAYUKI;OMINO SACHIKO
分类号 G11C17/00;G11C16/02;G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C17/00
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