摘要 |
<p>PURPOSE:To perform a cleavage of an epitaxial layer without making thin a substrate when forming the mirror-shaped cleavage section of a semiconductor laser element. CONSTITUTION:Mainly a main substrate 1 out of wafers with an epitaxial layer 2 on the substrate 1 is selectively etched and then the epitaxial layer remaining in an overhung shape is mechanically subjected to cleavage, thus forming a mirror section. Since only the epitaxial layer is subjected to cleavage separately from the substrate for easiness, a dicing saw, etc., can be used when splitting into chips.</p> |