发明名称 MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT
摘要 <p>PURPOSE:To perform a cleavage of an epitaxial layer without making thin a substrate when forming the mirror-shaped cleavage section of a semiconductor laser element. CONSTITUTION:Mainly a main substrate 1 out of wafers with an epitaxial layer 2 on the substrate 1 is selectively etched and then the epitaxial layer remaining in an overhung shape is mechanically subjected to cleavage, thus forming a mirror section. Since only the epitaxial layer is subjected to cleavage separately from the substrate for easiness, a dicing saw, etc., can be used when splitting into chips.</p>
申请公布号 JPH06334270(A) 申请公布日期 1994.12.02
申请号 JP19930145611 申请日期 1993.05.24
申请人 SUMITOMO ELECTRIC IND LTD 发明人 YAMASHITA MASASHI
分类号 H01L21/308;H01L21/301;H01L21/78;H01S5/00;(IPC1-7):H01S3/18 主分类号 H01L21/308
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