| 摘要 |
PURPOSE:To provide a low-power semiconductor memory device of stable operation, which does not use large capacitors and does not require refreshing. CONSTITUTION:When a word line WL is set to an 'H' level, a MOSFET 10 is turned on, and write data in a bit line BL is held in a bistable circuit which is composed of a MOSFET 20 and of a resistance 30. When stored data is read out, the word line WL is set to the 'H' level, the MOSFET 10 is turned on, data which has been stored in a node N1 is amplified by an amplifier circuit which is composed of a MOSFET 40 and a resistance 50, and the amplified data is output to the bit line BL. |
