Top gate TFT with polymer interface control layer

摘要

A transistor includes a substrate and a polymer layer that is in contact with the substrate. The polymer layer has a first pattern defining a first area. There is an inorganic semiconductor layer over and in contact with the polymer layer that has a second pattern defining a second area. The first area is located within the second area. There is a source electrode in contact with a first portion of the semiconductor layer and a drain electrode in contact with a second portion of the semiconductor layer, and the source electrode and the drain electrode separated by a gap. A gate insulating layer is in contact with the inorganic semiconductor layer in the gap. There is a gate in contact with the gate insulating layer over the gap.

主权项

1. A transistor comprising:
a substrate; an electrically insulating polymer layer in contact with the substrate, the electrically insulating polymer layer having a first pattern defining a first area; an inorganic semiconductor layer over and in contact with the electrically insulating polymer layer and having a second pattern defining a second area, the first area located within the second area; a source electrode in contact with a first portion of the semiconductor layer; a drain electrode in contact with a second portion of the semiconductor layer, the source electrode and the drain electrode separated by a gap; a gate insulating layer in contact with the inorganic semiconductor layer in the gap; and a gate in contact with the gate insulating layer over the gap.