SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF

摘要

The present invention provides a semiconductor device and a method for manufacturing the same. The semiconductor device according to an aspect of the present invention may include an active layer which is formed by depositing a semiconductive 2D transition metal dichalcogenide compound, an electrode layer which is formed by depositing a metallic 2D transition metal dichalcogenide compound on one surface of the active layer to input or output a current to or from the active layer, and a contact layer which forms ohmic contact by alloying the semiconductive 2D transition metal dichalcogenide compound with the metallic 2D transition metal dichalcogenide compound on the interface of the active layer and the electrode layer. So, the ohmic contact can be formed.