METHOD FOR REDUCING THE CONTENT OF NITROGEN OF SILICON CARBIDE POWDER, AND SILICON CARBIDE SINGLE CRYSTAL THEREOF
摘要
The present invention relates to a method for reducing a nitrogen content of silicon carbide powder and a silicon carbide single crystal prepared thereby. According to the present invention, a nitrogen content of silicon carbide powder can be reduced to be 100 ppm or less, and obtaining of a high resistance silicon carbide single crystal of 10^3 ohm-cm or more is possible when a silicon carbide single crystal grows using the same.
申请公布号
KR20160089973(A)
申请公布日期
2016.07.29
申请号
KR20150009672
申请日期
2015.01.21
申请人
KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY
发明人
SEO, WON SEON;KIM, YOUNG HEE;LEE, MYUNG HYUN;KIM, SOO RYONG;KWON, WOO TECK;SHIN, DONG GEUN;JUNG, EUN JIN;JEONG, SEONG MIN;KWON, YONG JIN