发明名称 METHOD FOR REDUCING THE CONTENT OF NITROGEN OF SILICON CARBIDE POWDER, AND SILICON CARBIDE SINGLE CRYSTAL THEREOF
摘要 The present invention relates to a method for reducing a nitrogen content of silicon carbide powder and a silicon carbide single crystal prepared thereby. According to the present invention, a nitrogen content of silicon carbide powder can be reduced to be 100 ppm or less, and obtaining of a high resistance silicon carbide single crystal of 10^3 ohm-cm or more is possible when a silicon carbide single crystal grows using the same.
申请公布号 KR20160089973(A) 申请公布日期 2016.07.29
申请号 KR20150009672 申请日期 2015.01.21
申请人 KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY 发明人 SEO, WON SEON;KIM, YOUNG HEE;LEE, MYUNG HYUN;KIM, SOO RYONG;KWON, WOO TECK;SHIN, DONG GEUN;JUNG, EUN JIN;JEONG, SEONG MIN;KWON, YONG JIN
分类号 C30B23/00;C30B29/36 主分类号 C30B23/00
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