| 摘要 |
A III-V semiconductor device comprises: a semiconductor-layer lamination structure arranged on a substrate; a source electrode and a drain electrode arranged to be separated from each other on the semiconductor-layer lamination structure; a gate electrode on the semiconductor-layer lamination structure, arranged between the source electrode and the drain electrode; a first passivation layer arranged between the gate electrode and the semiconductor-layer lamination structure and including a photoresist; a second passivation layer arranged to cover the semiconductor-layer lamination structure and the gate electrode and including a photoresist; and a third passivation layer covering the source electrode and the drain electrode and including a SU-8 photoresist. |
