发明名称 |
Stack comprising direct-bonded Si-wafers and process for manufacturing thin stack. |
摘要 |
A method is provided for direct bonding of silicon wafers, which allows, even in the case of clearly inferior surface roughness of the wafers and in the case of a high number of contaminating particles, satisfactory bonding of the wafers, and extremely high clean-room requirements need therefore not be satisfied. <IMAGE> |
申请公布号 |
EP0626720(A1) |
申请公布日期 |
1994.11.30 |
申请号 |
EP19930108665 |
申请日期 |
1993.05.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BAYER, THOMAS;GRESCHNER, JOHANN, DR. DIPL.-PHYS.;MEISSNER,KLAUS,DIPL.-PHYS.;STOEHR, ROLAND |
分类号 |
H01L21/18;H01L21/20;H01L21/58;H01L21/762 |
主分类号 |
H01L21/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|