发明名称 Floating drive technique for reverse battery protection.
摘要 <p>A MOSFET is used to protect a battery driven load against the effects of a reverse-connected battery. This invention is particularly suitable for use with loads, such as those commonly found in motor vehicles, which contain semiconductor devices that may be severely damaged by a reverse voltage. The source of the MOSFET is connected to the positive terminal of the battery, and a gate driver circuit is used to provide a gate to source voltage sufficient to turn the MOSFET on when the battery is properly connected. If the battery is connected in reverse, the gate driver turns the MOSFET off, and the intrinsic body-drain diode in the MOSFET prevents a reverse current flow through the load. In conjunction with the MOSFET, a sensing device sends out a warning signal which may be used, for example, to turn off a portion of the load if the output of the battery falls below a level necessary to maintain the MOSFET in a fully on condition. <IMAGE></p>
申请公布号 EP0626745(A2) 申请公布日期 1994.11.30
申请号 EP19940303819 申请日期 1994.05.26
申请人 SILICONIX INCORPORATED 发明人 WILLIAMS, RICHARD K;HILL, LORIMER K.
分类号 H01L27/04;H01L21/822;H01M2/34;H01M10/42;H02H7/18;H02H11/00;H02J7/00;(IPC1-7):H02H11/00 主分类号 H01L27/04
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