| 摘要 |
<p>The present invention provides a memory module using a large capacity DRAM without a self-refresh mode, which maintains the contents of the memory irrespective of non-input of a refresh signal from a computer. A memory module (20) includes twenty DRAMs (24) soldered on a surface and rear face of a substrate (22). A connector (26) equiped on an edge of the substrate (22) is inserted into a memory extension slot (8) of a computer (1) to connect the substrate (22) electrically with the computer (1). When the computer (1) outputs refresh signals RASm and CASn within or at intervals of 500 nanoseconds, a gate array (28) included in the memory module (20) outputs these RASm and CASn signals to the DRAMs (24). When 500 nanoseconds have elapsed since fall of both the RASm and CASn signals to a low level, on the other hand, the gate array (28) generates artificial refresh signals RFRS and RFCS, splits the RFRS signal into five and the RFCS signal into four, and outputs the split signals to the DRAMs (24). <IMAGE></p> |
