THIN-FILM PHOTOELECTRIC TRANSDUCER AND ITS MANUFACTURING PROCESS

摘要

PURPOSE:To improve the heat resisting thin film photoelectric conversion element characteristics by a method wherein a silicon layer (Cr-Si layer) 5-1,000Angstrom thick containing 1-90atom% of chrome is provided between a semiconductor and a backside electrode. CONSTITUTION:An amorphous p layer, an i layer and an n layer are formed on a transparent substrate with a transparent electrode. Then a layer with specified thickness is formed of chrome silicide. The composition of chrome silicide may be properly selected conforming to the composition of Cr-Si layer. Later, a heat resisting thin film photoelectric conversion element may be produced by means of depositing a backside electrode ulilizing conventional process. Moreover when the element is processed at the filming temperature of 180 deg.C (around 180-400 deg.C) for 0.5-4hr, the contact between semiconductor layer/Cr-Si layer/backside electrode may be improved to reduce the series resistance on the interface thereof.