发明名称 |
Semiconductor device incorporating a contact and manufacture thereof. |
摘要 |
A semiconductor device comprising a silicon substrate, an oxide layer on the silicon substrate, a doped polysilicon region disposed on the oxide layer, a dielectric layer which has been deposited over the doped polysilicon region and the silicon substrate, a contact hole which is formed in the dielectric layer and extends over respective laterally adjacent portions of the doped polysilicon region and the silicon substrate and a contact which has been selectively deposited in the contact hole which electrically connects the said portions together. The invention also provides a method of fabricating a semiconductor device incorporating a refractory metal contact, the method comprising the steps of:- a) providing a semiconductor substrate having an oxide layer thereon and a doped polysilicon region disposed on the oxide layer; (b) depositing a dielectric layer over the doped polysilicon region and over the silicon substrate; (c) forming a contact hole in the dielectric layer which exposes a portion of the doped polysilicon region and a laterally adjacent portion of the silicon substrate; and (d) selectively depositing a contact into the contact hole thereby electrically to connect together the doped polysilicon region and the silicon substrate. <IMAGE> |
申请公布号 |
EP0587399(A3) |
申请公布日期 |
1994.11.30 |
申请号 |
EP19930307034 |
申请日期 |
1993.09.07 |
申请人 |
INMOS LIMITED |
发明人 |
NICHOLLS, HOWARD CHARLES;NORRINGTON, MICHAEL JOHN |
分类号 |
H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L21/8238;H01L23/485;H01L23/52;H01L23/522;H01L27/092;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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