| 摘要 |
PURPOSE:To effectively prevent or decrease the phenomenon that, when a ferroelectric layer is formed, first component as the basic component of the layer diffuses via a second electrode layer, by forming a diffusion barrier layer functioning as the diffusion barrier for the first component, so as to be adjacent to the second electrode layer. CONSTITUTION:A lower electrode 16 of a ferroelectric film 17 composed of lead titanate zirconate (PZT) consists of platinum, titanium and its intermetallic compound. A tungsten layer 18 functioning as the diffusion barrier for lead is formed under the lower electrode 16. By the effect of the diffusion barrier layer 18, it can be effectively prevented or decreased that Pb as the basic metal component diffuses from the lower electrode 16 into a barrier metal layer 13 or further a lower wiring layer 3 and a silicon layer 1, when the PZT film 17 is formed (the film is dried or the film is oxidized and sintered). |
