| 摘要 |
<p>PURPOSE:To obtain a projection pattern having high resolution by forming a pattern for exposure constituted of a phase member and another pattern constituted of a material reflecting or scattering a luminous flux having a specified wavelength on a transparent substrate. CONSTITUTION:The pattern 3 for exposure formed of the transparent phase member and a reticle alignment mark 4 are provided on a reticle 2, and the pattern 3 for exposure is projected and transferred on the surface of a wafer 6 on which resist is applied by a reduction type projecting lens 9. A reference mark 20 o a reference plate 19 arranged proximately to the lower part of the alignment mark 4 is constituted of a light shielding pattern made of Cr, and transmissively illuminated by the luminous flux having the same wavelength as the luminous flux exposure from a fiber 18 with the alignment mark 4 through a collimator lens 21. Thus, an edge can be clearly observed in the case of observing the alignment mark 4, positional deviation between the alignment mark 4 and the reference mark 20 is detected based on the deviation of the images of the detected alignment mark 4 and the reference mark 20 on an image-pickup surface 25, so that the reticle 2 can be aligned.</p> |
