| 摘要 |
PURPOSE:To manufacture a high-output semiconductor device having excellent heat radiating characteristics at a high yield. CONSTITUTION:The semiconductor device has such a structure that a transistor cell 15-is mounted on a via hole 13 filled with a metal 13a or another low- thermal-resistance substance independently from a semiconductor substrate 1 used at the time of manufacturing the semiconductor device in an island-like state. Therefore, such a structure and process which do not allow the cracking of substrates can be realized even when the substrate thickness in the transistor cell section is reduced to <=30mum with the purpose of improving the heat radiating characteristics of the semiconductor device. |
