| 摘要 |
<p>PURPOSE:To provide a thin-film field-effect transistor which realizes the high throughput and the low cost of a manufacturing process, whose uniformity is good in a large area and which is provided with a stationarily good characteristic. CONSTITUTION:A gate electrode 2, a gate insulating film 3 and an i-type amorphous silicon film 4 are formed on a glass substrate 1, and a protective insulating film 5a is formed on their upper part in a self-aligned manner with the gate electrode 2. The protective insulating film 5a is patterned by a hydrofluoric acid solution, a metal film is then formed, a metal silicide layer 6 is formed, the pattern of the protective insulating film 5a is reduced by a hydrofluoric acid solution, impurity ions are doped, and an n-layer 8 is formed in a source/ drain region. Thereby, it is sufficient to form the protective insulating film 5a only once, and the high throughput and the low cost of a manufacturing process can be realized. In addition, the metal silicide layer 6 can be former easily, and the title transistor is provided with a good switching characteristic.</p> |
