| 摘要 |
<p>PURPOSE:To obtain a flash erase type non-volatile memory capable of shortening a data erase time at the time of an erase mode. CONSTITUTION:A flash erase type non-volatile memory boosts supply voltage VPP for erasing data supplied from the outside when data are erased, and has a step-up circuit 1 applying supply voltage to the source of a memory cell 2 as a corresponding erase object. Consequently, since specified boosted voltage is applied to the source of the memory cell 2, the excitation of a tunnel effect, in which electrons corresponding to data written in the floating-gate of the memory cell 2 are removed, is promoted more effectively, thus positively erasing data with effect. Accordingly, the number of the procedure of data erase/erase verify conducted at every data erase can be reduced, thus remarkably shortening a data erase time.</p> |
