| 摘要 |
<p>PURPOSE:To provide a good display image by constituting a switching element with a shield electrode covering at least a part of channel area of a semiconductor layer, for reducing a back channel formed an TFT. CONSTITUTION:A switching element 21 is provided with a semiconductor layer 25 forming a channel area, an insulation layer 27 covering at least the channel area of the semiconductor layer 25, and a shield electrode 71, assigned in the insulation layer 27 and covering at least a part of the channel area. Further a source electrode 21b which, covering a part of the insulation layer 27, is assigned and electrically connected to the semiconductor layer 25, or a drain electrode 21c is provided. For example, on the semiconductor layer 25 of the TFT 21 consisting of an amorphous silicon a semiconductor protective film 27 for preventing deterioration of the semiconductor layer 25 is formed. Further, the insulation layer 27 is provided with the shield electrode 71 within it that, set to a constant potential, covers a part of the channel area of semiconductor layer 25.</p> |
