| 摘要 |
PURPOSE:To obtain a semiconductor device having a gold electrode which is excellent in heat resistance and capable of fine working, by forming a titanium film, a titanium nitride film having a specified thickness, and a platinum film having a specified film on a semiconductor substrate, and then forming a gold film. CONSTITUTION:An epitaxial layer 1, a base layer 2, and a silicon oxide film 3 are formed in order on a silicon substrate. After an emitter aperture part is formed in the silicon oxide film 3, an emitter layer 5 is formed by growing a poly silicon film 4. A base aperture part 6 is formed. A P<+> type diffusion layer 7 is formed. A platinum silicide film 8 is formed. By sputtering Ti, Tin and Pt in order, a Ti-TiN-Pt film 9 wherein the thickness of a TiN film is 50nm or larger and the thickness of a Pt film is 5-30nm is formed. A resist film 10 is spread, and an Au film 11 is formed by opening only an electrode forming part. The photoresist film 10 is eliminated, and the Ti-TiN-Pt film 9 except the electrode forming part is etched and eliminated. Hence a gold electrode 12 is formed. |
