METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

PURPOSE:To avert the corrosion of oxide semiconductor electrodes in production stages by executing opening of insulating layers plural times before and after a stage for forming metallic electrodes to be connected to these oxide semiconductor electrodes. CONSTITUTION:Pixel electrodes and TAB packaging electrodes consisting of ITO layers are formed as the oxide semiconductor electrodes and source-drain electrodes consisting of two layers of Ti and Al are formed as the metallic electrodes. The ITO layer 2 is first deposited by evaporation on a glass substrate 1 and is subjected to wet etching, by which patterns are formed and the pixel electrodes and the TAB packaging electrodes are formed. An SiOx layer 7 and a Cr layer 9 are thereafter formed and are patterned to form gate electrodes. An SiNx layer 9/a-Si layer 10/SiNx layer 11 are then formed and after these layers re patterned, an n<+>a-Si layer 12 is deposited thereon. Contact holes 13 with the pixel electrodes are bored by dry etching and a Ti layer 14 and Al layer 3 are successively deposited and patterned to form source and drain electrodes. A photoresist 4 is thereafter applied thereon and holes 15 for TAB packaging are opened by dry etching; in succession, the resist 15 is peeled.