| 摘要 |
<p>PURPOSE:To enable random access similar to an NOR type under high integration density equivalent to an NAND type, by forming a memory cell group having constitution almost similar to a conventional NAND type, on first conductivity type semiconductor layers which are isolated and capable of individual potential control. CONSTITUTION:Memory cells M11, M12, M13,... Mn belonging to a memory cell group MG7 consist of the following; source regions and drain regions of second conductivity type which are formed on the surface of a semiconductor layer 11, of a first conductivity type channel regions formed between the source regions and the channel regions, and floating gates and control gates which are laminated on the channel regions so as to interpose insulating layers. Each of the memory cell uses a source region in common with the drain region of one neighboring memory cell, and uses a drain region in common with the source region of the other neighboring memory cell. Thereby mutual series connection is obtained.</p> |
