| 摘要 |
<p>PURPOSE:To improve the responding frequency characteristic of a photoreceptor element which is fitted to a module mounted with a semiconductor laser and monitors the output of the laser and, at the same time, to reduce the dark current of the photoreceptor. CONSTITUTION:The photoreceptor element has a first impurity diffusion layer 6 which is formed in the upper-layer sections of semiconductor layers 2 and 3 containing an impurity of a first conductivity type and a second impurity diffusion layer 7 which is formed around the layer 6 at an interval in the layers 2 and 3 and contains impurity of a second conductivity type.</p> |
