SEMICONDUCTOR MEMORY DEVICE AND FABRICATION THEREOF

摘要

PURPOSE:To obtain a semiconductor memory device suitable for high integration in which a sufficient capacitance can be ensured even when the memory size is reduced. CONSTITUTION:The semiconductor memory device comprises an FET 11 and a capacitor including a storage node 17. The storage node 17 is constituted of a cylindrical part comprising a bottom face part 17a and a side wall part 17b connected with a conductor 16 and extending upward, and at least one fin part 17c provided along the outer peripheral face at the side wall part 17b of the cylindrical part and extending horizontally.