| 摘要 |
PURPOSE:To provide a semiconductor light emitting element manufacturing method by which the yield of semiconductor light emitting elements can be improved by preventing the characteristic deterioration of pellets and, at the same time, the manufacturing process of the elements can be simplified. CONSTITUTION:An n- and p-type electrode 11 and 12 are respectively formed on the n-type GaAs substrate 1 side and GaAlAs current diffusion layer 5 side of an epitaxial wafer 10 in which an InGaAlP double heterojunction layer and the GaAlAs current diffusion layer 5 are grown on an n-type GaAs substrate 1 by using the MOCVD method and protective films are formed on the layer 15 and electrodes 12. Then, after performing a dicing process on at least the substrate 1, heterojunction layer, and current diffusion layer 5 so as to separate them from each other at every element and etching all diced surfaces by >=2mum with a boron-based etchant, the protective films are removed. |
