| 摘要 |
PURPOSE:To form a crystalline silicon layer with crystallinity comparable to a single-crystal wafer on an insulating substrate. CONSTITUTION:A substrate, on which an amorphous region 12 and a single- crystal region 11 are adjacent, is placed in a space where H2O, CO2 and CO each have a partial pressure below 1X10<8> torr. An amorphous semiconductor layer 14 and a single-crystal semiconductor layer 13 are deposited on the amorphous region 12 and single-crystal region 11, respectively, by a sputtering method in which high-frequency power is applied to a target to form a plasma. Then, the amorphous semiconductor layer 14 is converted to a single-crystal layer by using the single-crystal semiconductor layer 13 alone, or the layer 13 and the single-crystal region 11, as a seed crystal. |
