SIC CHEMICAL VAPOR DEPOSITION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an SiC chemical vapor deposition device which inhibits particles from being generated by a material gas and inhibits convection flow and diffusion of the gas in a furnace body.SOLUTION: An SiC chemical vapor deposition device of the invention includes: a furnace body forming a growth space; a placement base provided in the furnace body and on which an SiC wafer is placed; a gas introduction pipe for introducing a material gas into the furnace body; a heat shield disposed around the gas introduction pipe and having through holes; and a cooling gas supply port for introducing a cooling gas into the through holes of the heat shield.SELECTED DRAWING: Figure 1