| 摘要 |
PURPOSE:To prevent the root part of a bump electrode from being destroyed by a method wherein a conductive film and a metal film come into contact on an insulating film which is formed on an aluminum electrode for a semiconductor device and which is provided with an opening part and the bump electrode is constituted of the conductive film and of a photosensitive resin. CONSTITUTION:An insulating film 13 which is provided with an opening part is formed on an aluminum electrode 12 for a semiconductor device 11. A metal film 14 is formed on the insulating film 13, and a photosensitive resin 15 is formed in such a way that the insulating film 13 is interposed on the metal film 14 in its peripheral part. Then, the surface region of the photosensitive resin 15 is covered with a conductive film 17, and the conductive film 17 is brought into contact with the metal film 14. As a result, a bump electrode 21 which is composed of the photosensitive resin 15 and of the conductive film 17 is obtained. Thereby, since the root part of the bump electrode 21 is reinforced with the conductive film 17, the strength of the root part can be increased. |
