| 摘要 |
PURPOSE:To provide the constitution of element isolation excellent in isolation characteristics wherein an element isolation pattern is not deformed when a memory cell is contracted, in a memory cell which is used in a high level integration DRAM. CONSTITUTION:The element isolation of a DRAM cell is constituted by using linear trench isolation 112 arranged parallel with bit lines 110, and gates 102 for isolation which are arranged perpendicularly to the trench isolation 112 and have the same shape as the word lines 104. Thereby pattern deformation as in the case that a usual rectangular active region, i.e., the LOCOS is used is not generated, so that a fine patterning exactly identical to the mask dimension is enabled. Further excellent isolation characteristics can be obtained wherein element isolation merits using two kinds of element isolation, i.e., the trench isolation 112 and the gates 102 for isolation, are exhibited. |
