发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To make high speed operation possible by inserting a capacitor having opposing electrodes between a power supply and a boost power supply thereby preventing the rising of word line potential from delaying and the noise from being generated. CONSTITUTION:A capacitor Ca is connected between a power supply voltage Vcc and the output side of a boost power supply 1. An inverter INV is provided so that a switching TrC for resetting the word line is driven in reverse phase to a TrA. A potential higher than that required for driving a word line WL is generated from the boost power supply 1 and stored in a capacitor having the capacitance higher than the word line thus preventing the rising of word line potential from delaying. Since the boost power supply 1 charges the capacitor Ca when the word line WL is not driven, high driving capacity is not required and thereby noise is suppressed along with the peak value of power consumption. When the opposing potential of the capacitor Ca is set at the power supply voltage Vcc, the electric field being applied to a dielectric can be lowered and the area occupied by the capacitor Ca can be decreased.
申请公布号 JPH06325567(A) 申请公布日期 1994.11.25
申请号 JP19930114332 申请日期 1993.05.17
申请人 OKI ELECTRIC IND CO LTD 发明人 ITO HIDEKI
分类号 G11C11/407;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/407
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