发明名称 |
METAL BORIDE OHMIC CONTACT ON DIAMOND AND METHOD FOR MAKING SAME |
摘要 |
An ohmic contact (10) includes a metal boride layer (13) on a semiconducting diamond layer (12). The metal boride preferably includes boron and a transition metal and, more preferably, a refractory metal. Heating of the metal boride layer (13) and diamond during fabrication forms a highly boron-doped surface portion (14) of the semiconductor diamond by boron diffusion. Alternately, the highly doped surface portion (14) may be formed by selective ion implantation, annealing to form a graphitized surface portion, and removing the graphitized surface portion (20) by etching to thereby expose the highly doped surface portion. In addition, an interface region (15) of a carbide may also be readily formed by heating. The ohmic contact (10) may be incorporated into many semiconductor devices including, for example, transistors, diodes, and other devices. |
申请公布号 |
WO9427313(A1) |
申请公布日期 |
1994.11.24 |
申请号 |
WO1994US04863 |
申请日期 |
1994.05.03 |
申请人 |
KOBE STEEL USA INC.;NORTH CAROLINA STATE UNIVERSTIY;DREIFUS, DAVID, L.;RUGGLES, GARY, A. |
发明人 |
DREIFUS, DAVID, L.;RUGGLES, GARY, A. |
分类号 |
H01L21/04;H01L29/16;H01L29/45;(IPC1-7):H01L21/285;H01L29/40 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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