Solid-state CCD image detector with overflow drain structure

摘要

A charge-coupled solid-state image detector is described which forms the overflow drain (4) of high concentration in each case on each photodiode. An impurity layer of high concentration is formed in the top layer of a pnpn structure, in order to be used as a drain against overflow, which allows overflow operation and electronic shutter operation even under low-voltage conditions and realises circuit construction on the chip. <IMAGE>