发明名称 |
CHARGE TRANSFER DEVICE WITH DRIVE GRID |
摘要 |
The invention relates to a charge transfer device. Such devices include at least one insulated conductive grid (3) connecting two semiconductor areas. According to the invention, each insulated conductive grid (3) has a width which gradually increases from the first semiconductor area (1) to the second semiconductor area (2). The width of each grid (3) is sufficiently narrow for the potential trough created by applying a voltage (V) to the grid to have a gradually increasing depth from the first area (1) to the second area (2), thus driving the charges. The invention can be applied to any charge transfer device and particularly to photodiodes. |
申请公布号 |
WO9427322(A1) |
申请公布日期 |
1994.11.24 |
申请号 |
WO1994FR00506 |
申请日期 |
1994.05.03 |
申请人 |
THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES;CARANHAC, SOPHIE;THENOZ, YVES |
发明人 |
CARANHAC, SOPHIE;THENOZ, YVES |
分类号 |
H01L27/148;H01L31/112 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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