SUBSTRATE TEMPERATURE CONTROL APPARATUS AND TECHNIQUE FOR CVD REACTORS

摘要

One of the critical experimental parameters affecting the quality and growth rate of chemical vapor species, such as, diamond is the substrate temperature. An apparatus and technique for the precise control of the substrate temperature in a chemical vapor deposition environment has been developed. In a preferred embodiment, the technique uses a variable gas mixture (16, 18) in conjunction with the disclosed apparatus of the present invention to precisely control the temperature of the substrate (10) to within at least +/- 20 DEG C for extended periods of time and over large area substrates on the order of 1" in diameter or larger.