| 摘要 |
<p>An ohmic contact (10) includes a metal boride layer (13) on a semiconducting diamond layer (12). The metal boride preferably includes boron and a transition metal and, more preferably, a refractory metal. Heating of the metal boride layer (13) and diamond during fabrication forms a highly boron-doped surface portion (14) of the semiconductor diamond by boron diffusion. Alternately, the highly doped surface portion (14) may be formed by selective ion implantation, annealing to form a graphitized surface portion, and removing the graphitized surface portion (20) by etching to thereby expose the highly doped surface portion. In addition, an interface region (15) of a carbide may also be readily formed by heating. The ohmic contact (10) may be incorporated into many semiconductor devices including, for example, transistors, diodes, and other devices.</p> |
