发明名称 |
METHOD OF FORMING BIPOLAR STRUCTURE |
摘要 |
<p>A method consisting of a sequence of process steps for fabricating a bipolar transistor having base contacts formed of polysilicon material and an emitter contact formed of polysilicon material or metal. The emitter contact is self-aligned to the base contacts by the use of process steps wherein a single mask aperture is used for defining the base contacts and the emitter.</p> |
申请公布号 |
JPS551183(A) |
申请公布日期 |
1980.01.07 |
申请号 |
JP19790045531 |
申请日期 |
1979.04.16 |
申请人 |
IBM |
发明人 |
TATSUKU HIYUNGU NINGU;WA NIEN YU |
分类号 |
H01L29/73;H01L21/033;H01L21/225;H01L21/285;H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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