Process for cleaning harmful gas.

摘要

There is disclosed a process for cleaning a harmful gas which comprises bringing a gas containing an alkoxide compound such as tetraethoxysilane and trimethylphosphorous acid or a silane compound such as monosilane and disilane as a harmful component into contact with a cleaning agent comprising an alkali metal compound such as potassium hydroxide, sodium hydroxide and potassium oxide supported on a metallic oxide comprising cupric oxide and manganese dioxide as principal components. According to the above process, it is made possible to effectively and safely remove the harmful component in the gas exhausted from semiconductor manufacturing process in an emergency or in ordinary case irrespective of its concentration.