Thin film heterojunction solar cell.

摘要

A thin film photovoltaic device comprising a metal back contact have a first CVD p-type semiconductor film of CIS thereon; a second, transparent, n-type semiconductor film of CVD, zinc oxide on the CIS and a thin interfacial film of transparent, insulating zinc oxide between the p-type CIS film and the n-type zinc oxide. The interfacial zinc oxide film is formed by depositing zinc hydroxide on the CIS from a solution of one of zinc sulphate, zinc chloride and zinc acetate and complexing agents comprising ammonium hydroxide and TEA and annealing the deposit to convert the zinc hydroxide to form the zinc oxide.