| 摘要 |
<p>Superconductivity is inhibited in selected portions of a high temperature superconductor ('HTS') material by patterning the selected portions with a resist. The patterned material is ion-bombarded to implant impurity ions in non-resist-bearing portions of the material. After low temperature annealing, the non-resist-bearing portions of the material lose their superconducting characteristics, but such characteristics are preserved in the material's resist-bearing portions. The material's crystalline structure is preserved, so additional layers can be epitaxially grown atop the inhibited material. Superconductivity is inhibited at a selected depth in an HTS material by subjecting the material to impurity ion bombardment at an energy level controlled to implant ions in the material at the selected depth. After low temperature annealing, the material loses its superconducting characteristics at the selected depth, but such characteristics are preserved at other depths (i.e. above and below the selected depth) and the material's crystalline structure is preserved. A multilayer HTS device and circuit structure can be made by initially depositing an HTS material on a substrate. Superconductivity is inhibited at a first selected depth in the material by ion-bombarding it at a first energy level controlled to implant impurity ions in the material at the first depth. The ion bombardment step is repeated for other selected depths by ion-bombarding the material at other energy levels controlled to implant impurity ions at the other depths. After low temperature annealing the material loses its superconducting characteristics at the selected depths, but such characteristics are preserved at other depths in the material, which retains its crystalline structure.</p> |
