| 摘要 |
The RF band switching circuit is constructed that an RF signal from a first RF switching diode is amplified at a first RF amplifying transistor, an RF signal from a second RF switching diode is amplified at a second amplifying transistor, the RF signals amplified at the first and second RF amplifying transistors are supplied to a mixer, band selection voltage signals are applied to the bases of the first and second RF amplifying transistors, the first and second RF switching diodes are biased to a voltage appearing at the emitter output voltage of the first and second RF transistors, thereby reducing power consumption of the circuit.
|
