| 摘要 |
The method includes the steps of forming a first conductive buffer layer (43), a first conductive first donor layer (45) a second conductive first delta doping layer (47), a first conductive first spacer layer (49), a first conductive active layer (51), a first conductive second spacer (53), a second donor layer (55), a second delta layer (57), a second conductive cap layer (59) onto a compound semiconductor substrate (41), forming a second conductive ion implantation region (61) into the cap layer, forming source and drain electrodes (62,63) on the region (61), removing the residual cap layer to form a gate electrode (64), thereby improving the device operating rate and output characteristics.
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