发明名称 OPTO-ELECTRONIC INTEGRATED CIRCUIT
摘要 An opto-electronic integrated circuit is arranged.to comprise a photodetector and a tunnel emitter bipolar transistor for first-stage amplification of a current generated in the photodetector, as formed on a substrate. The tunnel emitter bipolar transistor can be operated at high speed and has a high amplification factor, so that noise due to the base current can be reduced upon amplification of the current generated in the photodetector by light detection.
申请公布号 CA2123667(A1) 申请公布日期 1994.11.18
申请号 CA19942123667 申请日期 1994.05.16
申请人 SAWADA, SOSAKU;SASAKI, GORO;YANO, HIROSHI 发明人 SAWADA, SOSAKU;SASAKI, GORO;YANO, HIROSHI
分类号 H01L27/14;H01L27/144;H01L31/10;H03F3/08;(IPC1-7):H01L27/144 主分类号 H01L27/14
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