Halbleiterbauelement mit Stromanschlüssen für hohe Integrationsdichte

摘要

PCT No. PCT/DE94/00485 Sec. 371 Date Jan. 2, 1996 Sec. 102(e) Date Jan. 2, 1996 PCT Filed May 2, 1994 PCT Pub. No. WO94/25986 PCT Pub. Date Nov. 10, 1994A semiconductor component, wherein the common power supply is fed via buried metal layers (7, 9) which are present over the entire area and are connected to active functional elements (1) by vertical conductive connections (13, 15), the planes with which contact is not intended to be made being insulated from these vertical connections (13, 15) by dielectric (11) sheathing the latter.