发明名称 Microwave plasma processing process and apparatus
摘要 A microwave plasma processing process and apparatus useful in the fabrication of integrated circuit (IC) or similar semiconductor devices, wherein the object or material to be processed, such as a semiconductor wafer, is processed with plasma generated using microwaves transmitted through a microwave transmission window disposed perpendicular to an electric field of the progressive microwaves in the waveguide.
申请公布号 US5364519(A) 申请公布日期 1994.11.15
申请号 US19930054609 申请日期 1993.04.30
申请人 FUJITSU LIMITED 发明人 FUJIMURA, SHUZO;KISA, TOSHIMASA;MOTOKI, YASUNARI
分类号 H01J37/32;(IPC1-7):C23C16/50;H01L21/00 主分类号 H01J37/32
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