发明名称 |
Microwave plasma processing process and apparatus |
摘要 |
A microwave plasma processing process and apparatus useful in the fabrication of integrated circuit (IC) or similar semiconductor devices, wherein the object or material to be processed, such as a semiconductor wafer, is processed with plasma generated using microwaves transmitted through a microwave transmission window disposed perpendicular to an electric field of the progressive microwaves in the waveguide.
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申请公布号 |
US5364519(A) |
申请公布日期 |
1994.11.15 |
申请号 |
US19930054609 |
申请日期 |
1993.04.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUJIMURA, SHUZO;KISA, TOSHIMASA;MOTOKI, YASUNARI |
分类号 |
H01J37/32;(IPC1-7):C23C16/50;H01L21/00 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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